STMicroelectronics STGW60V60DF IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 791-7643
Mfr. Part No.:: STGW60V60DF
Brand:: STMicroelectronics

STMicroelectronics STGW60V60DF IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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10 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 5)

$6.742

(exc. GST)

$7.416

(inc. GST)

Units	Per unit	Per Pack*
5 +	$6.742	$33.71
*price indicative

RS Stock No.:: 791-7643
Mfr. Part No.:: STGW60V60DF
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

Product Details

IGBT Discretes, STMicroelectronics

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IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	60 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	375 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	15.75 x 5.15 x 20.15mm
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+175 °C