Toshiba GT60J323(Q), Type N-Channel IGBT, 60 A 600 V, 3-Pin TO-3PLH, Through Hole

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$4.91

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RS Stock No.:
184-521
Mfr. Part No.:
GT60J323(Q)
Brand:
Toshiba
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Brand

Toshiba

Maximum Continuous Collector Current Ic

60A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

170W

Package Type

TO-3PLH

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Maximum Gate Emitter Voltage VGEO

±25 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
JP

IGBT Discretes, Toshiba


IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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