- RS Stock No.:
- 754-5409
- Mfr. Part No.:
- IKW50N60TFKSA1
- Brand:
- Infineon
4 In AU stock for next working day delivery
3 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each
Was $11.36
You pay
$10.19
(exc. GST)
$11.21
(inc. GST)
Units | Per unit |
1 - 7 | $10.19 |
8 - 14 | $10.01 |
15 + | $9.83 |
- RS Stock No.:
- 754-5409
- Mfr. Part No.:
- IKW50N60TFKSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 100 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 333 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.03 x 21.1 x 5.16mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -40 °C |
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