STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount
- RS Stock No.:
- 686-8348
- Mfr. Part No.:
- STGE200NB60S
- Brand:
- STMicroelectronics
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Subtotal (1 unit)*
$54.56
(exc. GST)
$60.02
(inc. GST)
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- 10 unit(s) shipping from 30 December 2025
- Plus 581 unit(s) shipping from 05 January 2026
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Units | Per unit |
|---|---|
| 1 + | $54.56 |
*price indicative
- RS Stock No.:
- 686-8348
- Mfr. Part No.:
- STGE200NB60S
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 200 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | ISOTOP | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 4 | |
| Transistor Configuration | Single | |
| Dimensions | 38.2 x 25.5 x 9.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 200 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type ISOTOP | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 4 | ||
Transistor Configuration Single | ||
Dimensions 38.2 x 25.5 x 9.1mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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