Infineon IGP50N60TXKSA1 IGBT Module, 50 A 600 V TO-220
- RS Stock No.:
- 259-1525P
- Mfr. Part No.:
- IGP50N60TXKSA1
- Brand:
- Infineon
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$64.05
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$70.46
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In Stock
- 446 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 10 - 18 | $6.405 |
| 20 - 24 | $6.275 |
| 26 - 98 | $6.115 |
| 100 + | $5.45 |
*price indicative
- RS Stock No.:
- 259-1525P
- Mfr. Part No.:
- IGP50N60TXKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 333W | |
| Package Type | TO-220 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Standards/Approvals | JEDEC1 | |
| Width | 10.36mm | |
| Series | TRENCHSTOPTM | |
| Length | 29.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 333W | ||
Package Type TO-220 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Standards/Approvals JEDEC1 | ||
Width 10.36mm | ||
Series TRENCHSTOPTM | ||
Length 29.95mm | ||
Automotive Standard No | ||
The Infineon low loss IGBT has easy parallel switching capability due to positive temperature coefficient in Vcesat. It is high ruggedness, temperature stable behaviour. It is very soft, fast recovery anti-parallel emitter controlled diode.
Maximum junction temperature 175°C
Short circuit withstand time 5 micro second
Low EMI
Low gate charge
Very tight parameter distribution