Bourns BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247

RS Stock No.:: 253-3505
Mfr. Part No.:: BIDW20N60T
Brand:: Bourns

Bourns BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247

2282 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 2)

$5.265

(exc. GST)

$5.791

(inc. GST)

Units	Per unit	Per Pack*
2 - 8	$5.265	$10.53
10 - 48	$4.73	$9.46
50 - 98	$4.475	$8.95
100 - 248	$3.885	$7.77
250 +	$3.81	$7.62
*price indicative

RS Stock No.:: 253-3505
Mfr. Part No.:: BIDW20N60T
Brand:: Bourns

Technical data sheets

Datasheet - BIDW20N60T

Legislation and Compliance

Product Details

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.

600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
Low switching loss
RoHS compliant

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Maximum Continuous Collector Current	20 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	192 W
Number of Transistors	1
Configuration	Single Diode
Package Type	TO-247

Bourns BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247

Technical data sheets

Legislation and Compliance

Product Details

Specifications

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