Bourns BIDW20N60T IGBT, 40 A 600 V TO-247

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Subtotal (1 pack of 2 units)*

$8.62

(exc. GST)

$9.48

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8$4.31$8.62
10 - 48$3.87$7.74
50 - 98$3.66$7.32
100 - 248$3.175$6.35
250 +$3.12$6.24

*price indicative

Packaging Options:
RS Stock No.:
253-3505
Mfr. Part No.:
BIDW20N60T
Brand:
Bourns
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Brand

Bourns

Product Type

IGBT

Maximum Continuous Collector Current Ic

40A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

192W

Package Type

TO-247

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Series

BIDW20N60T

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.

600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat))

Trench-Gate Field-Stop technology

Optimized for conduction

Low switching loss

RoHS compliant

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