STMicroelectronics STGYA50M120DF3 Single IGBT, 100 A 1200 V Max247
- RS Stock No.:
- 248-4896
- Mfr. Part No.:
- STGYA50M120DF3
- Brand:
- STMicroelectronics
126 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each
$15.86
(exc. GST)
$17.45
(inc. GST)
| Units | Per unit |
| 1 - 1 | $15.86 |
| 2 - 4 | $14.27 |
| 5 - 9 | $12.85 |
| 10 - 14 | $11.56 |
| 15 + | $10.41 |
- RS Stock No.:
- 248-4896
- Mfr. Part No.:
- STGYA50M120DF3
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low loss and the short circuit functionality is essential. Furthermore, the positive VCEsat temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Maximum junction temperature of 175 degree C
10 μs of short circuit withstand time
Low VCEsat
Tight parameter distribution
Positive VCEsat temperature coefficient
Low thermal resistance
Soft and fast recovery antiparallel diode
10 μs of short circuit withstand time
Low VCEsat
Tight parameter distribution
Positive VCEsat temperature coefficient
Low thermal resistance
Soft and fast recovery antiparallel diode
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | 20V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 535 W |
| Package Type | Max247 |
| Configuration | Single |