Infineon DF200R07W2H3B77BPSA1 IGBT Module, 40 A, 70 A 650 V
- RS Stock No.:
- 248-1195
- Mfr. Part No.:
- DF200R07W2H3B77BPSA1
- Brand:
- Infineon
Available for back order.
Price (ex. GST) Each (In a Tray of 15)
$83.43
(exc. GST)
$91.77
(inc. GST)
Units | Per unit | Per Tray* |
|---|---|---|
| 15 - 15 | $83.43 | $1,251.45 |
| 30 - 30 | $79.258 | $1,188.87 |
| 45 + | $75.295 | $1,129.425 |
*price indicative
- RS Stock No.:
- 248-1195
- Mfr. Part No.:
- DF200R07W2H3B77BPSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device has Booster configuration and uses IGBT HighSpeed 3 technology.
Best cost-performance ratio with reduced system costs
High degree of freedom in design
Highest efficiency and power density
High degree of freedom in design
Highest efficiency and power density
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A, 70 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 4 |
| Maximum Power Dissipation | 20 mW |
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