Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V

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Subtotal (1 tray of 10 units)*

$2,247.04

(exc. GST)

$2,471.74

(inc. GST)

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Units
Per unit
Per Tray*
10 - 10$224.704$2,247.04
20 - 20$220.212$2,202.12
30 +$215.806$2,158.06

*price indicative

RS Stock No.:
244-5817
Mfr. Part No.:
FD150R12RT4HOSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

790 W

Number of Transistors

1

The infineon IGBT modules with fast trench/fieldstop IGBT4 and emitter controlled 4 diode are the right choice for your design it is suitable for typical applications like high frequency switching applications motor drives, UPS systems.

Electrical features
Extended operation temperature Tvj op
Low switching losses
Low VCEsat
Tvj op = 150° C
VCEsat with positive temperature coefficient
Mechanical features
Isolated base plate
Standard housing

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