Infineon FZ2400R33HE4BPSA1 Single IGBT Module, 2.4 kA 3300 V AG-IHVB190
- RS Stock No.:
- 236-5197
- Mfr. Part No.:
- FZ2400R33HE4BPSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
$3,360.11
(exc. GST)
$3,696.12
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 07 October 2026
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Units | Per unit |
|---|---|
| 1 - 1 | $3,360.11 |
| 2 - 2 | $3,292.90 |
| 3 + | $3,227.04 |
*price indicative
- RS Stock No.:
- 236-5197
- Mfr. Part No.:
- FZ2400R33HE4BPSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 2.4kA | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 3300V | |
| Number of Transistors | 3 | |
| Maximum Power Dissipation Pd | 5400kW | |
| Configuration | Single | |
| Package Type | AG-IHVB190 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 140 mm | |
| Length | 190mm | |
| Height | 38.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 2.4kA | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 3300V | ||
Number of Transistors 3 | ||
Maximum Power Dissipation Pd 5400kW | ||
Configuration Single | ||
Package Type AG-IHVB190 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 140 mm | ||
Length 190mm | ||
Height 38.5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon single-switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.
VCES is 3300 V
IC nom is 2400 A
ICRM is 4800 A
It retains high current density
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