Infineon IHW30N65R5XKSA1 IGBT, 60 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
$25.53
(exc. GST)
$28.085
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 255 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | $5.106 | $25.53 |
| 10 - 95 | $4.952 | $24.76 |
| 100 - 245 | $4.802 | $24.01 |
| 250 - 495 | $4.662 | $23.31 |
| 500 + | $4.522 | $22.61 |
*price indicative
- RS Stock No.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 176 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 176 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon resonant switching series reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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