STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

RS Stock No.:: 168-8686
Mfr. Part No.:: STGWT60H65DFB
Brand:: STMicroelectronics

STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

This image is representative of the product range

On back order for despatch 08/05/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Tube of 30)

$6.916

(exc. GST)

$7.608

(inc. GST)

Units	Per unit	Per Tube*
30 - 120	$6.916	$207.48
150 +	$6.225	$186.75
*price indicative

RS Stock No.:: 168-8686
Mfr. Part No.:: STGWT60H65DFB
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: KR

Product Details

IGBT Discretes, STMicroelectronics

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	80 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	375 W
Package Type	TO-3P
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	15.8 x 5 x 20.1mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C