STMicroelectronics, Type N-Channel IGBT, 10 A 375 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 168-6461
- Mfr. Part No.:
- STGB10NB37LZT4
- Brand:
- STMicroelectronics
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- RS Stock No.:
- 168-6461
- Mfr. Part No.:
- STGB10NB37LZT4
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 10A | |
| Maximum Collector Emitter Voltage Vceo | 375V | |
| Maximum Power Dissipation Pd | 125W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 8μs | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Emitter Voltage VGEO | 12 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 28.9mm | |
| Height | 4.6mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 10A | ||
Maximum Collector Emitter Voltage Vceo 375V | ||
Maximum Power Dissipation Pd 125W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 8μs | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Emitter Voltage VGEO 12 V | ||
Maximum Operating Temperature 175°C | ||
Length 28.9mm | ||
Height 4.6mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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