Infineon IRG4BC10UDPBF IGBT, 8.5 A 600 V, 3-Pin TO-220AB, Through Hole

Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs

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IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.