STMicroelectronics STGWT60V60DLF IGBT, 60 A 600 V, 3-Pin TO-3P, Through Hole

RS Stock No.:: 145-8649
Mfr. Part No.:: STGWT60V60DLF
Brand:: STMicroelectronics

STMicroelectronics STGWT60V60DLF IGBT, 60 A 600 V, 3-Pin TO-3P, Through Hole

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Available for back order.

Added

Price (ex. GST) Each (In a Tube of 30)

$9.169

(exc. GST)

$10.086

(inc. GST)

Units	Per unit	Per Tube*
30 +	$9.169	$275.07
*price indicative

RS Stock No.:: 145-8649
Mfr. Part No.:: STGWT60V60DLF
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: KR

Product Details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	60 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	375 W
Package Type	TO-3P
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	15.7 x 5.7 x 26.7mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C