onsemi, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 tube of 30 units)*

$117.00

(exc. GST)

$128.70

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 630 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 - 30$3.90$117.00
60 - 90$3.803$114.09
120 +$3.745$112.35

*price indicative

RS Stock No.:
145-4338
Mfr. Part No.:
FGAF40N60UFTU
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

40A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

100W

Package Type

TO-3PF

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

130ns

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Series

UF

Standards/Approvals

AEC, RoHS

Length

26.5mm

Height

5.45mm

Width

23 mm

Automotive Standard

No

COO (Country of Origin):
CN

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links