onsemi, Type N-Channel IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 tube of 30 units)*

$140.25

(exc. GST)

$154.26

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 240 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 - 30$4.675$140.25
60 - 90$4.558$136.74
120 +$4.487$134.61

*price indicative

RS Stock No.:
124-1336
Mfr. Part No.:
FGH40N60SMD
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

349W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Length

15.87mm

Width

20.82 mm

Height

4.82mm

Series

Field Stop

Standards/Approvals

RoHS

Automotive Standard

No

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links