IXYS IXXK110N65B4H1, Type N-Channel IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

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RS Stock No.:
125-8051
Mfr. Part No.:
IXXK110N65B4H1
Brand:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current Ic

570A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

880W

Package Type

TO-264

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

30kHz

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Series

Trench

Energy Rating

3mJ

Automotive Standard

No

IGBT Discretes, IXYS


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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