Infineon FF200R12KE3HOSA1, N-Channel IGBT Module, 295 A 1.2 kV, 7-Pin 62 mm Module, Surface
- RS Stock No.:
- 124-8789
- Mfr. Part No.:
- FF200R12KE3HOSA1
- Brand:
- Infineon
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$1,919.23
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$2,111.15
(inc. GST)
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Units | Per unit | Per Box* |
|---|---|---|
| 10 - 10 | $191.923 | $1,919.23 |
| 20 - 30 | $189.237 | $1,892.37 |
| 40 + | $184.247 | $1,842.47 |
*price indicative
- RS Stock No.:
- 124-8789
- Mfr. Part No.:
- FF200R12KE3HOSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 295A | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 1.05kW | |
| Number of Transistors | 2 | |
| Package Type | 62 mm Module | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 7 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 125°C | |
| Width | 61.4mm | |
| Series | FF200R12KE3 | |
| Length | 106.4mm | |
| Standards/Approvals | No | |
| Height | 29mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 295A | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 1.05kW | ||
Number of Transistors 2 | ||
Package Type 62 mm Module | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 7 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 125°C | ||
Width 61.4mm | ||
Series FF200R12KE3 | ||
Length 106.4mm | ||
Standards/Approvals No | ||
Height 29mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.