Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH

  • RS Stock No. 184-521
  • Mfr. Part No. GT60J323(Q)
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±25V
Package Type TO-3PLH
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 20.5mm
Width 5.2mm
Height 26mm
Dimensions 20.5 x 5.2 x 26mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
16 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each
$ 10.45
(exc. GST)
$ 11.49
(inc. GST)
units
Per unit
1 - 19
$10.45
20 - 49
$10.08
50 - 99
$9.46
100 +
$9.21
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Description:
IGBT Discretes, ON Semiconductor Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.