Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH

  • RS Stock No. 184-521
  • Mfr. Part No. GT60J323(Q)
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±25V
Package Type TO-3PLH
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 20.5mm
Width 5.2mm
Height 26mm
Dimensions 20.5 x 5.2 x 26mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
43 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 9.17
(exc. GST)
$ 10.09
(inc. GST)
units
Per unit
1 - 19
$9.17
20 - 49
$8.70
50 - 99
$7.93
100 +
$7.64
Packaging Options:
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