- RS Stock No.:
- 188-2794
- Mfr. Part No.:
- W29N01HVBINF
- Brand:
- Winbond
135 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 5)
$5.452
(exc. GST)
$5.997
(inc. GST)
Units | Per unit | Per Pack* |
5 - 50 | $5.452 | $27.26 |
55 - 100 | $5.318 | $26.59 |
105 + | $5.236 | $26.18 |
*price indicative |
- RS Stock No.:
- 188-2794
- Mfr. Part No.:
- W29N01HVBINF
- Brand:
- Winbond
Technical data sheets
Legislation and Compliance
Product Details
Density : 1Gbit (Single chip solution)
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 1G-bit/128M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Copy Back
Lowest power consumption
Read: 25mA(typ.3V),
Program/Erase: 25mA(typ.3V),
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
48-ball VFBGA
63-ball VFBGA
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 1G-bit/128M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Copy Back
Lowest power consumption
Read: 25mA(typ.3V),
Program/Erase: 25mA(typ.3V),
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
48-ball VFBGA
63-ball VFBGA
1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Memory Size | 1Gbit |
Interface Type | Parallel |
Package Type | VFBGA |
Pin Count | 63 |
Organisation | 128M x 8 bit |
Mounting Type | Surface Mount |
Cell Type | SLC NAND |
Minimum Operating Supply Voltage | 2.7 V |
Maximum Operating Supply Voltage | 3.6 V |
Block Organisation | Symmetrical |
Length | 11.1mm |
Height | 0.6mm |
Width | 9.1mm |
Dimensions | 11.1 x 9.1 x 0.6mm |
Maximum Operating Temperature | +85 °C |
Maximum Random Access Time | 25µs |
Number of Bits per Word | 8bit |
Series | W29N |
Minimum Operating Temperature | -40 °C |
Number of Words | 128M |
Related links
- Alliance Memory NOR 2Mbit SPI Flash Memory 8-Pin SOIC, M45PE20-VMN6P
- Winbond SLC NAND 1Gbit Parallel Flash Memory 48-Pin TSOP, W29N01HVSINA
- Alliance Memory 32Mbit Parallel Flash Memory 56-Pin TSOP, JS28F320J3F75A
- Winbond SLC NAND 1Gbit Parallel Flash Memory 63-Pin VFBGA, W29N01HVBINA
- Winbond SLC NAND 1Gbit Parallel Flash Memory 63-Pin VFBGA, W29N01HZBINA
- Alliance Memory NAND 4GByte eMMC Flash Memory 153-Pin FBGA, ASFC4G31M-51BIN
- Microchip Flash Memory
- Winbond Flash Memory