Winbond SLC NAND 4 GB Parallel Flash Memory 63-Pin VFBGA

This image is representative of the product range

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
188-2561
Mfr. Part No.:
W29N04GVBIAF
Brand:
Winbond
Find similar products by selecting one or more attributes.
Select all

Brand

Winbond

Product Type

Flash Memory

Memory Size

4GB

Interface Type

Parallel

Package Type

VFBGA

Pin Count

63

Organisation

512M x 8 Bit

Mount Type

Surface

Cell Type

SLC NAND

Maximum Supply Voltage

3.6V

Minimum Supply Voltage

2.7V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Height

0.6mm

Length

11.1mm

Width

11.1 mm

Standards/Approvals

No

Number of Bits per Word

8

Series

W29N04GV

Automotive Standard

No

Number of Words

512M

Maximum Random Access Time

25μs

Supply Current

35mA

Density : 4Gbit (Single chip solution)

Vcc : 2.7V to 3.6V

Bus width : x8

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 4G-bit/512M-byte

Page size

2,112 bytes (2048 + 64 bytes)

Block size

64 pages (128K + 4K bytes)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command set

Additional command support

Sequential Cache Read

Random Cache Read

Cache Program

Copy Back

Two-plane operation

Contact Winbond for OTP feature

Contact Winbond for Block Lock feature

Lowest power consumption

Read: 25mA(typ.)

Program/Erase: 25mA(typ.)

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

4Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

Related links