Infineon BFR35APE6327HTSA1 NPN RF Bipolar Transistor, 45 mA, 15 V, 3-Pin SOT-23

RS Stock No.:: 445-2203P
Mfr. Part No.:: BFR35APE6327HTSA1
Brand:: Infineon

Infineon BFR35APE6327HTSA1 NPN RF Bipolar Transistor, 45 mA, 15 V, 3-Pin SOT-23

This image is representative of the product range

1160 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip

$0.602

(exc. GST)

$0.662

(inc. GST)

Units	Per unit
750 - 1495	$0.602
1500 +	$0.592

RS Stock No.:: 445-2203P
Mfr. Part No.:: BFR35APE6327HTSA1
Brand:: Infineon

BFR35AP NPN Silicon RF Transistor Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum DC Collector Current	45 mA
Maximum Collector Emitter Voltage	15 V
Package Type	SOT-23
Mounting Type	Surface Mount
Maximum Power Dissipation	280 mW
Transistor Configuration	Single
Maximum Collector Base Voltage	20 V
Maximum Emitter Base Voltage	2.5 V
Maximum Operating Frequency	5000 MHz
Pin Count	3
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Dimensions	1 x 2.9 x 1.3mm
Minimum Operating Temperature	-65 °C

Infineon BFR35APE6327HTSA1 NPN RF Bipolar Transistor, 45 mA, 15 V, 3-Pin SOT-23

RF Bipolar Transistors, Infineon