Infineon BFP640H6327XTSA1 NPN RF Bipolar Transistor, 50 mA, 4.1 V SOT-343
- RS Stock No.:
- 259-1440
- Mfr. Part No.:
- BFP640H6327XTSA1
- Brand:
- Infineon
On back order for despatch 03/12/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 3000)
$0.319
(exc. GST)
$0.351
(inc. GST)
| Units | Per unit | Per Reel* |
| 3000 + | $0.319 | $957.00 |
| *price indicative | ||
- RS Stock No.:
- 259-1440
- Mfr. Part No.:
- BFP640H6327XTSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.
Robust high performance low noise amplifier based on Infineon's reliable
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 50 mA |
| Maximum Collector Emitter Voltage | 4.1 V |
| Package Type | SOT-343 |
| Mounting Type | Surface Mount |