STMicroelectronics MJD112T4 Transistor, 2 A NPN, 100 V, 3-Pin DPAK
- RS Stock No.:
- 151-413P
- Mfr. Part No.:
- MJD112T4
- Brand:
- STMicroelectronics
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$177.80
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$195.60
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In Stock
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Units | Per unit |
|---|---|
| 200 - 480 | $0.889 |
| 500 - 980 | $0.823 |
| 1000 - 1980 | $0.758 |
| 2000 + | $0.73 |
*price indicative
- RS Stock No.:
- 151-413P
- Mfr. Part No.:
- MJD112T4
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 2A | |
| Maximum Collector Emitter Voltage Vceo | 100V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 100V | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum DC Current Gain hFE | 200 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 20W | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 6mm | |
| Standards/Approvals | RoHS | |
| Length | 6.4m | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 2A | ||
Maximum Collector Emitter Voltage Vceo 100V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 100V | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum DC Current Gain hFE 200 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 20W | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 6mm | ||
Standards/Approvals RoHS | ||
Length 6.4m | ||
Automotive Standard No | ||
The STMicroelectronics Transistors, This device is manufactured in Planar technology with “base island” layout and monolithic Darlington configuration.
Good hFE linearity
High fT frequency