P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB Infineon IRF5210PBF
- RS Stock No.:
- 541-1720
- Distrelec Article No.:
- 303-41-280
- Mfr. Part No.:
- IRF5210PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)**
$4.84
(exc. GST)
$5.32
(inc. GST)
3 In AU stock for next working day delivery*
40 In Global stock for delivery within 10 working day(s)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit |
---|---|
1 - 12 | $4.84 |
13 - 24 | $4.77 |
25 + | $4.67 |
**price indicative
- RS Stock No.:
- 541-1720
- Distrelec Article No.:
- 303-41-280
- Mfr. Part No.:
- IRF5210PBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 40 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 60 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 200 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
Transistor Material | Si | |
Width | 4.69mm | |
Maximum Operating Temperature | +175 °C | |
Length | 10.54mm | |
Number of Elements per Chip | 1 | |
Forward Diode Voltage | 1.6V | |
Height | 8.77mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.69mm | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.6V | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
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