N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-323 Infineon BSS138WH6433XTMA1

RS Stock No.:: 165-5731
Mfr. Part No.:: BSS138WH6433XTMA1
Brand:: Infineon

N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-323 Infineon BSS138WH6433XTMA1

This image is representative of the product range

On back order for despatch 27/01/2025, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (On a Reel of 10000)

$0.069

(exc. GST)

$0.076

(inc. GST)

Units	Per unit	Per Reel*
10000 - 40000	$0.069	$690.00
50000 +	$0.062	$620.00
*price indicative

RS Stock No.:: 165-5731
Mfr. Part No.:: BSS138WH6433XTMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon SIPMOS® N-Channel MOSFETs

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	280 mA
Maximum Drain Source Voltage	60 V
Series	SIPMOS
Package Type	SOT-323
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	6 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.4V
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	500 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	2mm
Width	1.25mm
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	1 nC @ 10 V
Maximum Operating Temperature	+150 °C
Height	0.8mm
Minimum Operating Temperature	-55 °C