DiodesZetex 30 V 1 A Diode Schottky 2-Pin SOD-323
- RS Stock No.:
- 751-4935P
- Mfr. Part No.:
- SDM100K30L-7
- Brand:
- DiodesZetex
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Units | Per unit | Saving |
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- RS Stock No.:
- 751-4935P
- Mfr. Part No.:
- SDM100K30L-7
- Brand:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | SOD-323 | |
| Maximum Continuous Forward Current If | 1A | |
| Peak Reverse Repetitive Voltage Vrrm | 30V | |
| Diode Configuration | Single | |
| Series | SDM100K30L | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 485mV | |
| Peak Reverse Current Ir | 100μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 9A | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 125°C | |
| Width | 1.4mm | |
| Standards/Approvals | FBI | |
| Height | 1.05mm | |
| Length | 1.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type SOD-323 | ||
Maximum Continuous Forward Current If 1A | ||
Peak Reverse Repetitive Voltage Vrrm 30V | ||
Diode Configuration Single | ||
Series SDM100K30L | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 485mV | ||
Peak Reverse Current Ir 100μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 9A | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 125°C | ||
Width 1.4mm | ||
Standards/Approvals FBI | ||
Height 1.05mm | ||
Length 1.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two Terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.