Taiwan Semiconductor 20 V 1 A Diode Schottky 2-Pin DO-214AC SS12 R2
- RS Stock No.:
- 652-7573P
- Mfr. Part No.:
- SS12 R2
- Brand:
- Taiwan Semiconductor
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View bulk pricing optionsSubtotal 1900 units (supplied on a reel)*
$418.00
(exc. GST)
$456.00
(inc. GST)
FREE delivery for orders over $80.00 ex GST
In Stock
- Plus 800 unit(s) shipping from 10 August 2026
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Units | Per unit |
|---|---|
| 1900 - 3700 | $0.22 |
| 3800 + | $0.216 |
*price indicative
- RS Stock No.:
- 652-7573P
- Mfr. Part No.:
- SS12 R2
- Brand:
- Taiwan Semiconductor
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | DO-214AC | |
| Maximum Continuous Forward Current If | 1A | |
| Peak Reverse Repetitive Voltage Vrrm | 20V | |
| Series | SS12 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -65°C | |
| Maximum Forward Voltage Vf | 0.5V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A | |
| Peak Reverse Current Ir | 400μA | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Length | 4.6mm | |
| Height | 2.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type DO-214AC | ||
Maximum Continuous Forward Current If 1A | ||
Peak Reverse Repetitive Voltage Vrrm 20V | ||
Series SS12 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -65°C | ||
Maximum Forward Voltage Vf 0.5V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 30A | ||
Peak Reverse Current Ir 400μA | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Length 4.6mm | ||
Height 2.3mm | ||
Automotive Standard No | ||
Schottky Barrier Diodes, up to 1A, Taiwan Semiconductor
Low power loss
Low foward voltage drop
High current capability