STMicroelectronics 1200 V 20 A Rectifier & Schottky Diode Rectifier Diode 2-Pin DO-247 LL
- RS Stock No.:
- 275-1360P
- Mfr. Part No.:
- STPSC20G12WL
- Brand:
- STMicroelectronics
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Units | Per unit | Saving |
|---|---|---|
| 5 - 9 | $16.91 | - |
| 10 - 99 | $15.20 | 10% |
| 100 - 249 | $12.64 | 25% |
| 250 + | $11.93 | 29% |
*price indicative
- RS Stock No.:
- 275-1360P
- Mfr. Part No.:
- STPSC20G12WL
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | DO-247 LL | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | STPS | |
| Diode Configuration | Single | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -65°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1100A | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.1mm | |
| Length | 15.9mm | |
| Standards/Approvals | RoHS | |
| Height | 41.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type DO-247 LL | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series STPS | ||
Diode Configuration Single | ||
Rectifier Type Rectifier Diode | ||
Pin Count 2 | ||
Minimum Operating Temperature -65°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1100A | ||
Maximum Operating Temperature 175°C | ||
Width 5.1mm | ||
Length 15.9mm | ||
Standards/Approvals RoHS | ||
Height 41.2mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn off behaviour is independent of temperature.
None or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Avalanche energy rated