Infineon 650 V 41 A Schottky Barrier Diode Schottky TO-220-2
- RS Stock No.:
- 242-0974P
- Mfr. Part No.:
- IDH20G65C6XKSA1
- Brand:
- Infineon
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Units | Per unit | Saving |
|---|---|---|
| 10 - 99 | $12.45 | - |
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| 500 + | $11.56 | 7% |
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- RS Stock No.:
- 242-0974P
- Mfr. Part No.:
- IDH20G65C6XKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Schottky Barrier Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220-2 | |
| Maximum Continuous Forward Current If | 41A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | XDH20G65 | |
| Rectifier Type | Schottky | |
| Maximum Forward Voltage Vf | 1.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 99A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 153μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC (J-STD20 and JESD22) | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Schottky Barrier Diode | ||
Mount Type Through Hole | ||
Package Type TO-220-2 | ||
Maximum Continuous Forward Current If 41A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series XDH20G65 | ||
Rectifier Type Schottky | ||
Maximum Forward Voltage Vf 1.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 99A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 153μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC (J-STD20 and JESD22) | ||
Automotive Standard No | ||
The Infineon Schottky diodes & rectifiers SIC DIODES have repetitive reverse voltage(Vrrm) is 650 V.The operating temperature is starts from -55 °C to 175 °C.
Through hole mounting technology
108 W Power Dissipation
System efficiency improvement
System cost and size savings due to the reduced cooling requirements
Enabling higher frequency and increased power density