onsemi 650 V 11 A Diode Schottky 2-Pin TO-220
- RS Stock No.:
- 194-5751
- Mfr. Part No.:
- FFSP1065B
- Brand:
- onsemi
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$156.00
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Last RS stock
- Final 750 unit(s), ready to ship from another location
Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 50 - 50 | $3.12 | $156.00 | - |
| 100 - 150 | $3.042 | $152.10 | $7.80 |
| 200 + | $2.995 | $149.75 | $25.00 |
*price indicative
- RS Stock No.:
- 194-5751
- Mfr. Part No.:
- FFSP1065B
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 11A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 650A | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.51mm | |
| Standards/Approvals | RoHS | |
| Length | 10.67mm | |
| Width | 2.92mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 11A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 160μA | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 650A | ||
Maximum Operating Temperature 175°C | ||
Height 16.51mm | ||
Standards/Approvals RoHS | ||
Length 10.67mm | ||
Width 2.92mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Pb-Free, Halogen Free/BFR Free
175C
49 mJ
Applications
General Purpose
SMPS
Solar Inverter
UPS
Power Switching Circuit
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