onsemi 1.2 kV 10 A Schottky Diode & Rectifier Merged Pin Schottky 3-Pin TO-247-3
- RS Stock No.:
- 648-526P
- Mfr. Part No.:
- UJ3D1210KSD
- Brand:
- onsemi
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Subtotal 2 units (supplied in a tube)*
$19.37
(exc. GST)
$21.31
(inc. GST)
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Units | Per unit |
|---|---|
| 2 + | $9.685 |
*price indicative
- RS Stock No.:
- 648-526P
- Mfr. Part No.:
- UJ3D1210KSD
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Schottky Diode & Rectifier | |
| Mount Type | Through Hole | |
| Package Type | TO-247-3 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | 2x Common Cathode Pair | |
| Series | UJ3 | |
| Rectifier Type | Merged Pin Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 110μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Maximum Forward Voltage Vf | 2.6V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.9mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Height | 20.96mm | |
| Width | 5.03mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Schottky Diode & Rectifier | ||
Mount Type Through Hole | ||
Package Type TO-247-3 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration 2x Common Cathode Pair | ||
Series UJ3 | ||
Rectifier Type Merged Pin Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 110μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Maximum Forward Voltage Vf 2.6V | ||
Maximum Operating Temperature 175°C | ||
Length 15.9mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Height 20.96mm | ||
Width 5.03mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS tested