onsemi 1200 V 24 A Diode 3-Pin TO-247-3LD
- RS Stock No.:
- 218-672P
- Mfr. Part No.:
- NDSH20120CDN
- Brand:
- onsemi
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View bulk pricing optionsSubtotal 10 units (supplied in a tube)*
$157.60
(exc. GST)
$173.40
(inc. GST)
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In Stock
- Plus 900 unit(s) shipping from 17 August 2026
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Units | Per unit |
|---|---|
| 10 - 99 | $15.76 |
| 100 - 499 | $14.54 |
| 500 - 999 | $13.49 |
| 1000 + | $12.10 |
*price indicative
- RS Stock No.:
- 218-672P
- Mfr. Part No.:
- NDSH20120CDN
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-3LD | |
| Maximum Continuous Forward Current If | 24A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Dual Anode Common Cathode | |
| Series | NDSH | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 546A | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Forward Voltage Vf | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-3LD | ||
Maximum Continuous Forward Current If 24A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Dual Anode Common Cathode | ||
Series NDSH | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 546A | ||
Peak Reverse Current Ir 200μA | ||
Maximum Forward Voltage Vf 1.75V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling