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OSI Optoelectronics, PIN-RD15 Visible Light Si Photodiode, Through Hole TO-8

9 In stock for delivery within 7 working day(s)
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RS Stock No.:
Mfr. Part No.:
OSI Optoelectronics

RoHS Status: Not Applicable

COO (Country of Origin):
unitsPer unit
1 - 4$319.75
5 - 9$308.17
10 - 24$297.56
25 +$284.75

These Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area. These Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions.

Product Applications
Laser Applications
Control Systems
Electron Detection
High Energy Physics
Medical Instrumentation
Product Features
Large Active Area
Fully Depleteable
Fast Response
Ultra Low Dark Current

Spectrums DetectedVisible Light
Wavelength of Peak Sensitivity900nm
Package TypeTO-8
Mounting TypeThrough Hole
Number of Pins3
Diode MaterialSi
Minimum Wavelength Detected350nm
Maximum Wavelength Detected1100nm
Peak Photo Sensitivity0.58A/W
Typical Rise Time3ns
Shunt Resistance