OSI Optoelectronics, UV-100L Si Photodiode, Through Hole Low Profile

OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer structure UV enhanced photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts applied reverse bias.

Product Applications
Pollution Monitoring
Medical Instrumentation
UV Exposure Meters
Spectroscopy
Water Purification
Fluorescence
Product Features
Inversion series: 100% Internal QE
Ultra High Shunt Resistance
Excellent UV Response

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