Infineon 4 MB 45 ns NVRAM 44-Pin TSOP, CY14B104LA-ZS25XI
- RS Stock No.:
- 194-9072
- Mfr. Part No.:
- CY14B104LA-ZS25XI
- Brand:
- Infineon
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 194-9072
- Mfr. Part No.:
- CY14B104LA-ZS25XI
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | NVRAM | |
| Memory Size | 4MB | |
| Organisation | 512 k x 8 Bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 45ns | |
| Mount Type | Surface | |
| Package Type | TSOP | |
| Pin Count | 44 | |
| Standards/Approvals | No | |
| Width | 10.26 mm | |
| Height | 1.04mm | |
| Length | 18.51mm | |
| Maximum Operating Temperature | 85°C | |
| Automotive Standard | No | |
| Maximum Supply Voltage | 3.6V | |
| Number of Words | 512K | |
| Supply Current | 70mA | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Minimum Supply Voltage | 2.7V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type NVRAM | ||
Memory Size 4MB | ||
Organisation 512 k x 8 Bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 45ns | ||
Mount Type Surface | ||
Package Type TSOP | ||
Pin Count 44 | ||
Standards/Approvals No | ||
Width 10.26 mm | ||
Height 1.04mm | ||
Length 18.51mm | ||
Maximum Operating Temperature 85°C | ||
Automotive Standard No | ||
Maximum Supply Voltage 3.6V | ||
Number of Words 512K | ||
Supply Current 70mA | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
Minimum Supply Voltage 2.7V | ||
- COO (Country of Origin):
- PH
The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.
Related links
- Infineon 4 MB 45 ns NVRAM 44-Pin TSOP
- Infineon 1Mbit 45ns NVRAM CY14B101NA-ZS25XI
- Infineon 4Mbit 45ns NVRAM CY14B104NA-ZS45XI
- Maxim Integrated 1 MB 120 ns NVRAM 32-Pin EDIP, DS1245Y-120+
- Alliance Memory AS6CE1016A-45ZINTR SDRAM 1 MB Pin, 44-Pin 16 bit 44-pin 400 mil TSOP II
- Macronix NOR 4 MB Parallel Flash Memory 32-Pin TSOP
- Macronix NOR 4 MB Parallel Flash Memory 48-Pin TSOP
- Microchip 4 MB EPROM 44-Pin PLCC
