STMicroelectronics STripFET Type P-Channel MOSFET, 10 A, 60 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 917-2747P
- Mfr. Part No.:
- STD10P6F6
- Brand:
- STMicroelectronics
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Subtotal 20 units (supplied on a continuous strip)*
$31.16
(exc. GST)
$34.28
(inc. GST)
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In Stock
- Plus 680 unit(s) shipping from 04 June 2026
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Units | Per unit |
|---|---|
| 20 + | $1.558 |
*price indicative
- RS Stock No.:
- 917-2747P
- Mfr. Part No.:
- STD10P6F6
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Maximum Power Dissipation Pd | 30W | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.38mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Maximum Power Dissipation Pd 30W | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.38mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.