N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220F IXYS IXTP8N65X2M

RS Stock No.:: 917-1491
Mfr. Part No.:: IXTP8N65X2M
Brand:: IXYS

N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220F IXYS IXTP8N65X2M

This image is representative of the product range

25 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 5)

$4.636

(exc. GST)

$5.10

(inc. GST)

Units	Per unit	Per Pack*
5 - 20	$4.636	$23.18
25 +	$4.58	$22.90

*price indicative

RS Stock No.:: 917-1491
Mfr. Part No.:: IXTP8N65X2M
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS X2-Class Series

The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4 A
Maximum Drain Source Voltage	650 V
Series	X2-Class
Package Type	TO-220F
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	550 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	32 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	16.07mm
Typical Gate Charge @ Vgs	12 nC @ 10 V
Length	10.36mm
Height	4.9mm
Forward Diode Voltage	1.4V
Minimum Operating Temperature	-55 °C