N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 Infineon IPP041N12N3GXKSA1

RS Stock No.:: 897-7311P
Mfr. Part No.:: IPP041N12N3GXKSA1
Brand:: Infineon

N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 Infineon IPP041N12N3GXKSA1

This image is representative of the product range

394 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (Supplied in a Tube)

$9.30

(exc. GST)

$10.23

(inc. GST)

Units	Per unit
14 - 24	$9.30
26 +	$9.13

RS Stock No.:: 897-7311P
Mfr. Part No.:: IPP041N12N3GXKSA1
Brand:: Infineon

IPI041N12N3 G, IPP041N12N3 G, IPB038N12N3 G, OptiMOS3 Power MOSFET Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	120 V
Package Type	TO-220
Series	OptiMOS™ 3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4.1 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	158 nC
Maximum Operating Temperature	+175 °C
Length	10.36mm
Width	4.57mm
Number of Elements per Chip	1
Transistor Material	Si
Height	15.95mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 Infineon IPP041N12N3GXKSA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over