Toshiba TK Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-220 TK40A06N1,S4X(S
- RS Stock No.:
- 896-2375
- Mfr. Part No.:
- TK40A06N1,S4X(S
- Brand:
- Toshiba
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
$15.29
(exc. GST)
$16.82
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- Plus 50 unit(s) shipping from 29 December 2025
- Plus 20 unit(s) shipping from 05 January 2026
- Plus 150 unit(s) shipping from 28 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | $1.529 | $15.29 |
| 50 - 90 | $1.491 | $14.91 |
| 100 - 240 | $1.465 | $14.65 |
| 250 - 490 | $1.42 | $14.20 |
| 500 + | $1.373 | $13.73 |
*price indicative
- RS Stock No.:
- 896-2375
- Mfr. Part No.:
- TK40A06N1,S4X(S
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 30W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 15mm | |
| Width | 4.5 mm | |
| Length | 10mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TK | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 30W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 15mm | ||
Width 4.5 mm | ||
Length 10mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba
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