Toshiba DTMOSIV Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220 TK31A60W,S4VX(M
- RS Stock No.:
- 891-2954
- Mfr. Part No.:
- TK31A60W,S4VX(M
- Brand:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
$27.01
(exc. GST)
$29.712
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 12 unit(s) ready to ship from another location
- Plus 204 unit(s) shipping from 27 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | $13.505 | $27.01 |
| 10 - 48 | $13.16 | $26.32 |
| 50 - 98 | $12.955 | $25.91 |
| 100 - 198 | $12.565 | $25.13 |
| 200 + | $12.175 | $24.35 |
*price indicative
- RS Stock No.:
- 891-2954
- Mfr. Part No.:
- TK31A60W,S4VX(M
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | DTMOSIV | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 88mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 45W | |
| Forward Voltage Vf | -1.7V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.5 mm | |
| Height | 15mm | |
| Length | 10mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series DTMOSIV | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 88mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 45W | ||
Forward Voltage Vf -1.7V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Operating Temperature 150°C | ||
Width 4.5 mm | ||
Height 15mm | ||
Length 10mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
MOSFET N-Channel, TK3x Series, Toshiba
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Related links
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