IXYS GigaMOS, HiperFET N-Channel MOSFET, 100 A, 300 V, 24-Pin SMPD MMIX1F160N30T

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Packaging Options:
RS Stock No.:
875-2487
Mfr. Part No.:
MMIX1F160N30T
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

300 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

570 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

376 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

25.25mm

Number of Elements per Chip

1

Transistor Material

Si

Width

23.25mm

Height

5.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

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