Name: Infineon N-Channel MOSFET Tetrode, 25 mA, 8 V, 6-Pin SOT-363 BG3130H6327XTSA1
Brand: Infineon
SKU: 857-8472
Price: 0.21 AUD
Availability: Discontinued

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	25 mA
	Maximum Drain Source Voltage	8 V
	Package Type	SOT-363 (SC-88)
	Mounting Type	Surface Mount
	Pin Count	6
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.6V
	Maximum Power Dissipation	200 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	+6 V
	Transistor Material	Si
	Length	2mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Width	1.25mm
	Height	0.8mm
	Typical Power Gain	31 dB

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 25 mA
	Maximum Drain Source Voltage 8 V
	Package Type SOT-363 (SC-88)
	Mounting Type Surface Mount
	Pin Count 6
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.6V
	Maximum Power Dissipation 200 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage +6 V
	Transistor Material Si
	Length 2mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Width 1.25mm
	Height 0.8mm
	Typical Power Gain 31 dB

Infineon Dual-gate MOSFET Tetrode

Dual-gate Low noise Tetrode MOSFET RF transistors from Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon N-Channel MOSFET Tetrode, 25 mA, 8 V, 6-Pin SOT-363 BG3130H6327XTSA1

Infineon Dual-gate MOSFET Tetrode

Related links