Infineon OptiMOS N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK IPD30N06S223ATMA1

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Subtotal (1 reel of 2500 units)*

$1,937.50

(exc. GST)

$2,130.00

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 2500$0.775$1,937.50
5000 - 5000$0.771$1,927.50
7500 +$0.764$1,910.00

*price indicative

RS Stock No.:
857-4584
Mfr. Part No.:
IPD30N06S223ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

55 V

Series

OptiMOS

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

25 nC @ 10 V

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Minimum Operating Temperature

-55 °C

Height

2.41mm

RoHS Status: Not Applicable

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