N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK Infineon IPD30N06S223ATMA1

RS Stock No.:: 857-4584
Mfr. Part No.:: IPD30N06S223ATMA1
Brand:: Infineon

N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK Infineon IPD30N06S223ATMA1

999999999 In AU stock for next working day delivery

999999999 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 2500)

$0.775

(exc. GST)

$0.853

(inc. GST)

Units	Per unit	Per Reel*
2500 - 2500	$0.775	$1,937.50
5000 - 5000	$0.771	$1,927.50
7500 +	$0.764	$1,910.00

*price indicative

RS Stock No.:: 857-4584
Mfr. Part No.:: IPD30N06S223ATMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

Product Details

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	55 V
Package Type	DPAK (TO-252)
Series	OptiMOS
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	23 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	100 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Length	6.73mm
Typical Gate Charge @ Vgs	25 nC @ 10 V
Width	6.22mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Height	2.41mm
Minimum Operating Temperature	-55 °C