N-Channel MOSFET, 8 A, 800 V, 3-Pin TO-220 FP Infineon SPA08N80C3XKSA1

RS Stock No.:: 823-5645
Mfr. Part No.:: SPA08N80C3XKSA1
Brand:: Infineon

N-Channel MOSFET, 8 A, 800 V, 3-Pin TO-220 FP Infineon SPA08N80C3XKSA1

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RS Stock No.:: 823-5645
Mfr. Part No.:: SPA08N80C3XKSA1
Brand:: Infineon

Infineon CoolMOS™C3 Power MOSFET

Infineon CoolMOS™ C3 Series MOSFET, 8A Maximum Continuous Drain Current, 40W Maximum Power Dissipation - SPA08N80C3XKSA1

This power transistor is designed for high voltage applications, focusing on efficiency and thermal management. It serves as a vital component in contemporary industrial applications.

Features & Benefits

• Maximum continuous drain current of 8A
• Withstands drain-source voltages up to 800V
• Low on-state resistance enhances efficiency
• Ultra-low gate charge facilitates faster operation
• Robust performance across a wide temperature range
• Fully isolated packaging for enhanced safety

Applications

• Utilised in industrial equipment requiring high DC bulk voltages
• Suitable for active clamp forward switching
• Applicable in power conversion systems
• Employed in automation processes and electrical control systems

What is the operating temperature range for use?

The product operates effectively from -55°C to +150°C, providing stability across diverse environments.

How can the thermal performance be maintained during operation?

Adequate heat dissipation is crucial

the junction-case thermal resistance is measured at 3.8 K/W.

Can this be used in repetitive avalanche conditions?

Yes, it is rated for repetitive avalanche conditions, with specified energy limits outlined in the product specifications.

What is the significance of having ultra-low effective capacitances?

Ultra-low effective capacitances enhance switching performance and minimise energy losses during transitions.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	8 A
Maximum Drain Source Voltage	800 V
Package Type	TO-220 FP
Series	CoolMOS™ C3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.5 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	40 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Width	4.85mm
Typical Gate Charge @ Vgs	45 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	10.65mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C
Height	16.15mm