DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.4 A, 60 V Enhancement, 8-Pin SOIC DMN6066SSD-13
- RS Stock No.:
- 823-4012
- Mfr. Part No.:
- DMN6066SSD-13
- Brand:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
$11.37
(exc. GST)
$12.51
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 390 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 620 | $1.137 | $11.37 |
| 630 - 1240 | $1.109 | $11.09 |
| 1250 + | $1.09 | $10.90 |
*price indicative
- RS Stock No.:
- 823-4012
- Mfr. Part No.:
- DMN6066SSD-13
- Brand:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 97mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Maximum Power Dissipation Pd | 2.14W | |
| Forward Voltage Vf | 0.89V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Length | 5mm | |
| Standards/Approvals | MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, J-STD-020 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 97mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Maximum Power Dissipation Pd 2.14W | ||
Forward Voltage Vf 0.89V | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Width 4 mm | ||
Height 1.5mm | ||
Length 5mm | ||
Standards/Approvals MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, J-STD-020 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Related links
- Diodes Inc Dual N-Channel MOSFET 60 V, 8-Pin SOIC DMN6066SSD-13
- onsemi PowerTrench Dual N/P-Channel MOSFET 6.2 A 8-Pin SOIC FDS4897C
- onsemi PowerTrench Dual N/P-Channel-Channel MOSFET 6.2 A 8-Pin SOIC FDS4897C
- Diodes Inc Dual N-Channel MOSFET 60 V, 8-Pin SOIC DMN6070SSD-13
- Diodes Inc Dual N-Channel MOSFET 60 V, 8-Pin SOIC DMN6040SSD-13
- Diodes Inc Dual N-Channel MOSFET 20 V, 8-Pin SOIC DMN2041LSD-13
- Diodes Inc Dual N-Channel MOSFET 30 V, 8-Pin SOIC DMG4800LSD-13
- Diodes Inc Dual N-Channel MOSFET 40 V, 8-Pin SOIC DMN4031SSD-13
