Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

RS Stock No.:: 818-1416
Mfr. Part No.:: SI7900AEDN-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

This image is representative of the product range

Available for back order.

Price (ex. GST) Each (In a Pack of 10)

$1.416

(exc. GST)

$1.558

(inc. GST)

Units	Per unit	Per Pack*
10 - 740	$1.416	$14.16
750 - 1490	$1.38	$13.80
1500 +	$1.359	$13.59

*price indicative

RS Stock No.:: 818-1416
Mfr. Part No.:: SI7900AEDN-T1-GE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Dual N-Channel MOSFET, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6 A
Maximum Drain Source Voltage	20 V
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	36 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.5 W
Transistor Configuration	Common Drain
Maximum Gate Source Voltage	-12 V, +12 V
Number of Elements per Chip	2
Width	3.15mm
Typical Gate Charge @ Vgs	10.5 nC @ 4.5 V
Maximum Operating Temperature	+150 °C
Length	3.15mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.07mm