Vishay Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 SI7900AEDN-T1-GE3

This image is representative of the product range

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
165-6339
Mfr. Part No.:
SI7900AEDN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

36 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

-12 V, +12 V

Length

3.15mm

Width

3.15mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

10.5 nC @ 4.5 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Dual N-Channel MOSFET, Vishay Semiconductor


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



MOSFET Transistors, Vishay Semiconductor