N-Channel MOSFET, 7.7 A, 100 V, 3-Pin DPAK Vishay SIHLR120TR-GE3

RS Stock No.:: 813-0720
Mfr. Part No.:: SIHLR120TR-GE3
Brand:: Vishay

N-Channel MOSFET, 7.7 A, 100 V, 3-Pin DPAK Vishay SIHLR120TR-GE3

This image is representative of the product range

Discontinued product

RS Stock No.:: 813-0720
Mfr. Part No.:: SIHLR120TR-GE3
Brand:: Vishay

IRLR120, IRLU120, SiHLR120, SiHLU120, Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	7.7 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	380 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	42 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +10 V
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	12 nC @ 5 V
Width	6.22mm
Length	6.73mm
Maximum Operating Temperature	+150 °C
Height	2.38mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 7.7 A, 100 V, 3-Pin DPAK Vishay SIHLR120TR-GE3

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

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